Transistors
2SC4391
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1674
■ Features
■ Absolute Maximum Ratings T
Note) * : Copper plate at the collector is more than 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Low collector-emitter saturation voltage V
• High collector-emitter voltage (Base open) V
• Allowing supply with the radial taping
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * 1: Pulse measurement
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
120 to 240
*
R
* 1
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
h
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
170 to 340
I
stg
FE1
FE2
C
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
= 25°C
T
ob
2
* 2
* 1
S
in area, 1.7 mm in thickness
CE(sat)
−55 to +150
CEO
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
150
CB
CE
CE
CB
CB
1.5
80
80
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 500 mA, I
= 500 mA, I
5
1
1
SJC00154BED
= 2 V, I
= 2 V, I
= 40 V, I
= 10 V, I
= 10 V, I
B
C
C
C
E
Conditions
Unit
E
E
E
= 0
= 100 mA
= 500 mA
°C
°C
W
= 0
= 0
B
B
V
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0, f = 1 MHz
= 50 mA
= 50 mA
0.65 max.
0.45
2.5
0.7
+0.10
–0.05
±0.5
1
Min
6.9
120
4.0
80
80
60
5
2
±0.1
3
2.5
0.15
0.85
Typ
120
10
±0.5
1.05
MT-2-A1 Package
Max
0.30
1.20
±0.05
340
0.1
20
1: Emitter
2: Collector
3: Base
Unit: mm
0.45
2.5
MHz
(0.8)
Unit
µA
pF
V
V
V
V
V
+0.10
–0.05
±0.1
1