2sc4332 Renesas Electronics Corporation., 2sc4332 Datasheet - Page 2

• Manufacturer Part Number: 2sc4332
• Description: Npn Silicon Epitaxial Transistor For High-speed Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulse test PW ≤ 350
h
SWITCHING TIME (t
2
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Base Saturation Voltage
Collector Capacitance
Gain Bandwidth Product
Turn-on Time
Storage Time
Fall Time
FE
Marking
CLASSIFICATION
h
FE2
Parameter
100 to 200
M
on
, t
μ
stg
s, duty cycle ≤ 2%
V
V
V
V
V
V
Symbol
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
h
h
h
CEO(SUS)
CEX(SUS)
, t
I
I
I
I
I
FE1
FE2
FE3
C
CEX1
CEX2
CBO
t
CER
EBO
t
f
stg
t
on
ob
T
f
Note
Note
Note
f
) TEST CIRCUIT
150 to 300
Note
Note
Note
Note
L
I
I
V
V
V
V
V
T
V
V
V
V
I
I
I
I
V
V
I
I
Refer to the test circuit.
C
C
C
C
C
C
C
B1
A
BE(OFF)
CE
CE
CE
CE
A
EB
CE
CE
CE
CB
CE
= 3.0 A, I
= 3.0 A, I
= 3.0 A, I
= 4.0 A, I
= 3.0 A, I
= 4.0 A, I
= 3.0 A, R
= 125°C
= −I
= 25°C)
= 5.0 V, I
= 60 V, I
= 60 V, R
= 60 V, V
= 60 V, V
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 10 V, I
= 10 V, I
Data Sheet D16430EJ3V0DS
B2
= −1.5 V, L = 180
= 0.15 A, V
B
B1
B
B
B
B
L
E
E
E
= 0.3 A, L = 1 mH
= 0.15 A
= 0.2 A
= 0.15 A
= 0.2 A
C
200 to 400
C
C
C
BE(OFF)
BE(OFF)
BE
= −I
= 16.7 Ω,
Conditions
= 0
= 0, f = 1.0 MHz
= −0.5 A
= 0
= 0.5 A
= 1.0 A
= 3.0 A
= 51 Ω, T
B2
K
= −1.5 V
= −1.5 V,
= 0.3 A,
CC
50 V
A
μ
H, clamped
= 125°C
Collector current
waveform
Base current
waveform
MIN.
100
100
60
60
60
TYP.
130
150
2SC4332,4332-Z
MAX.
400
1.0
1.0
0.3
0.5
1.2
1.5
0.3
1.5
0.3
10
10
10
MHz
Unit
mA
mA
μ
μ
μ
pF
μ
μ
μ
V
V
V
V
V
V
A
A
A
s
s
s