2sc4814 Renesas Electronics Corporation., 2sc4814 Datasheet - Page 2

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2sc4814

Manufacturer Part Number
2sc4814
Description
Npn Silicon Epitaxial Transistor For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
* Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%
2
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
PACKAGE DRAWING (UNIT: mm)
EQUIVALENT CIRCUIT
Electrode Connection
1. Base
2. Collector
3. Emitter
Parameter
Symbol
V
V
h
h
CE(sat)
BE(sat)
I
I
C
t
CBO
EBO
FE1
FE2
t
f
stg
t
on
T
ob
f
*
*
*
*
V
V
V
V
I
I
V
V
I
R
Refer to the test circuit.
C
C
C
CB
EB
CE
CE
CE
CE
L
= 1.5 A, I
= 1.5 A, I
= 1.5 A, I
= 8.0 Ω, V
= 120 V, I
= 5 V, I
= 2 V, I
= 2 V, I
= 10 V, I
= 10 V, I
Data Sheet D15604EJ2V0DS
C
C
C
B
B
B1
C
E
= 0
= 1.0 A
= 1.5 A
= 10 mA
= 10 mA
CC
TAPING SPECIFICATION
= −I
E
Conditions
= 1.0 A
= 0 , f = 1 MHz
= 0
= 12 V
B2
= 10 mA
MIN.
300
250
TYP.
700
600
0.5
2.0
0.5
60
40
0.7 MAX.
MAX.
1,200
0.3
1.3
50
50
MHz
Unit
µ A
µ A
pF
µ s
µ s
µ s
V
V
2SC4814

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