2sc4988frtl-e Renesas Electronics Corporation., 2sc4988frtl-e Datasheet

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2sc4988frtl-e

Manufacturer Part Number
2sc4988frtl-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC4988
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
Outline
Note:
Attention: This device is very sensitive to electro static discharge.
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Rev.3.00 Aug 10, 2005 page 1 of 7
High gain bandwidth product
f
High gain, low noise figure
PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz
T
= 8.5 GHz Typ
1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)
It is recommended to adopt appropriate cautions when handling this transistor.
Marking is “FR”.
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
Item
R
)
3
2
1
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
C
4
*UPAK is a trademark of Renesas Technology Corp.
–55 to +150
Ratings
800*
100
150
1.5
15
9
1
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
(Previous ADE-208-004A)
REJ03G0738-0300
Aug.10.2005
Unit
mW
mA
°C
°C
V
V
V
(Ta = 25°C)
Rev.3.00

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2sc4988frtl-e Summary of contents

Page 1

Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product f = 8.5 GHz Typ T High gain, low noise figure PG = 10.5 dB Typ 1.3 dB Typ ...

Page 2

Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Rev.3.00 Aug 10, 2005 page Symbol Min Typ ...

Page 3

Main Characteristics Collector Power Dissipation Curve 1600 1200 800 400 0 50 100 Ambient Temperature Ta (°C) Gain Bandwidth Product vs. Collector Current Collector Current I Power Gain ...

Page 4

Rev.3.00 Aug 10, 2005 page S21 Parameter vs. Collector Current GHz Collector Current I (mA) C 100 ...

Page 5

S11 Parameter vs. Frequency 1.0 1.5 0 Ð.2 Ð.4 Ð.6 Ð.8 Ð1 Condition 200 to 2000 MHz (200 MHz step) (I ...

Page 6

S Parameter Freq. S11 (MHz) MAG. ANG. 200 0.555 –66.6 400 0.328 –102.5 600 0.225 –133.1 800 0.185 –160.5 1000 0.172 170.5 1200 0.179 148.5 1400 0.200 131.7 1600 0.224 120.0 1800 0.253 108.7 2000 0.277 99.8 S Parameter ...

Page 7

... Package Dimensions JEITA Package Code RENESAS Code SC-62 PLZZ0004CA-A 4.5 ± 0.1 1.8 Max 0.53 Max 0.48 Max 1.5 1.5 Ordering Information Part Name 2SC4988FRTL-E 1000 Rev.3.00 Aug 10, 2005 page Package Name MASS[Typ.] UPAK / UPAKV 0.050g 1.5 ± 0.1 0.44 Max φ 1 0.44 Max 3.0 Quantity 178 mm Reel Emboss Taping Unit ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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