2sc4553 Renesas Electronics Corporation., 2sc4553 Datasheet
2sc4553
Manufacturer Part Number
2sc4553
Description
Npn Silicon Epitaxial Transistor For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC4553.pdf
(6 pages)
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Company:
Part Number:
2SC4553
Manufacturer:
PANJIT
Quantity:
20 000
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
collector saturation voltage and features large current switching at a
low power dissipation. In addition, a high h
the driver load.
FEATURES
• High h
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 10 ms, duty cycle ≤ 50%
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
h
V
insulation bushing
The 2SC4553 is a power transistor designed especially for low
FE
CE(sat)
≅ 800 (V
FE
Parameter
≅ 0.12 V (I
and low V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
CE
= 2 V, I
C
CE(sat)
= 3 A, I
C
= 3 A)
:
P
P
B
T
T
= 0.03 A)
NPN SILICON EPITAXIAL TRANSISTOR
(Tc = 25°C)
(Ta = 25°C)
Symbol
I
C(pulse)
V
V
I
V
I
C(DC)
B(DC)
T
T
CBO
CEO
EBO
stg
j
*
FOR HIGH-SPEED SWITCHING
FE
−55 to +150
enables alleviation of
Ratings
±7.5
100
100
±10
150
7.0
2.0
2.0
30
DATA SHEET
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
(48,9$/(17 &,5&8,7
2SC4553
(OHFWURGH &RQQHFWLRQ
%DVH
&ROOHFWRU
(PLWWHU
©
1998
2002
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2sc4553 Summary of contents
Page 1
... NPN SILICON EPITAXIAL TRANSISTOR The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high h the driver load. FEATURES • High h and low CE(sat) ≅ 800 ( ...
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C) SWITCHING TIME ( TEST CIRCUIT RQ VWJ I 2 Ω − ≅ Data Sheet D15599EJ2V0DS 6& µ µ µ µ ...
Page 3
TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C) ° Data Sheet D15599EJ2V0DS 6& ° 3 ...
Page 4
Data Sheet D15599EJ2V0DS 6& ...
Page 5
Data Sheet D15599EJ2V0DS 6& 5 ...
Page 6
The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...