2sc4227-t1 Renesas Electronics Corporation., 2sc4227-t1 Datasheet - Page 3

• Manufacturer Part Number: 2sc4227-t1
• Description: High Frequency Low Noise Amplifier Npn Silicon Epitaxial Transistor Super Mini Mold
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
200
100
50
20
10
50
20
10
0
0
0.5
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 3 V
1
25
Base to Emitter Voltage V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Ambient Temperature T
Collector Current I
50
0.5
75
5
100
10
C
(mA)
A
A
BE
V
(˚C)
Free Air
CE
= +25°C, unless otherwise specified)
(V)
125
= 3 V
Data Sheet PU10451EJ01V0DS
150
50
1
0.5
0.2
0.1
25
20
15
10
10
5
2
1
5
0
8
6
4
2
0
REVERSE TRANSFER CAPACITANCE
0.5
vs. COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1
V
f = 1 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector to Emitter Voltage V
= 3 V
1
Collector to Base Voltage V
2
Collector Current I
5
0.5
5
10
10
C
(mA)
CB
20
CE
f = 1 MHz
(V)
(V)
2SC4227
50
50
1
3