bc847bm3 ON Semiconductor, bc847bm3 Datasheet - Page 2

• Manufacturer Part Number: bc847bm3
• Description: General Purpose Transistor
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(V
(I
C
C
C
E
C
C
C
C
CB
= 1.0 mA)
= 10 mA)
= 10 mA, V
= 10 mA)
= 10 mA, V
= 2.0 mA, V
= 10 mA, V
= 0.2 mA, V
= 10 V, f = 1.0 MHz)
EB
CE
CE
CE
CE
= 0)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 5.0 Vdc, R
(I
C
C
(V
= 2.0 mA, V
= 10 mA, V
CB
CB
Characteristic
= 30 V)
= 30 V, T
S
(I
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
C
= 10 mA, I
= 100 mA, I
(I
CE
CE
C
C
A
= 5.0 V)
(T
= 10 mA, I
= 100 mA, I
= 5.0 V)
= 150 C)
A
= 25 C unless otherwise noted)
B
B
= 0.5 mA)
= 5.0 mA)
B
B
= 0.5 mA)
= 5.0 mA)
http://onsemi.com
BC847BM3T5G
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I
CE(sat)
BE(sat)
C
BE(on)
h
CBO
NF
f
obo
FE
T
Min
200
580
100
6.0
45
50
50
−
−
−
−
−
−
−
−
−
−
Typ
150
290
660
0.7
0.9
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
450
700
770
5.0
0.6
4.5
15
10
−
−
−
−
−
−
−
−
Unit
MHz
mV
nA
mA
dB
pF
V
V
V
V
V
V
−