2sc2914 Inchange Semiconductor Company, 2sc2914 Datasheet

2sc2914

Manufacturer Part Number

2sc2914

Description

Silicon Npn Power Transistors

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SC2914.pdf (3 pages)

Current page: 1 of 3
Download datasheet (129Kb)

Silicon NPN Power Transistors

DESCRIPTION

·With TO-3 package

·High breakdown voltage

·Fast switching speed.

·Wide area of safe operation

APPLICATIONS

·For switching regulator applications

PINNING(see Fig.2)

ABSOLUTE MAXIMUM RATINGS(T

Inchange Semiconductor

SYMBOL

CBO

CEO

EBO

stg

Base

Emitter

Collector

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

=25

℃)

Open emitter

Open base

Open collector

=25℃

CONDITIONS

Fig.1 simplified outline (TO-3) and symbol

Product Specification

-55~150

VALUE

500

400

120

150

2SC2914

UNIT

℃

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2sc2914 Summary of contents

Page 1

... Collector current C P Collector power dissipation C Junction temperature T j Storage temperature T stg Fig.1 simplified outline (TO-3) and symbol ℃) =25 C CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SC2914 VALUE UNIT 500 V 400 120 W ℃ 150 ℃ -55~150 ...

Page 2

... DC current gain FE CONDITIONS I =5mA ; R =∞ =1mA ; =1mA ; =10A =10A =400V ; = Product Specification 2SC2914 MIN TYP. MAX UNIT 400 V 500 1.0 V 2.0 V μA 100 μA 100 12 ...

Page 3

... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Product Specification 3 2SC2914 ...

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