2sc2229 TOSHIBA Semiconductor CORPORATION, 2sc2229 Datasheet - Page 4

• Manufacturer Part Number: 2sc2229
• Description: Toshiba Transistor Silicon Npn Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

200
100
50
30
10
50
30
10
5
3
1
3
5
1
1
3
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
I C max (continuous)
I C max (pulsed)*
C ob (I E = 0)
Ta = 25°C
C ib (I C = 0)
Collector-emitter voltage V
3
10
Reverse voltage V
DC operation
Safe Operating Area
C
ib
10
, C
30
ob
300 ms*
– V
R
30
R
1 s*
CE
(V)
f = 1 MHz
Ta = 25°C
100
(V)
100 ms*
100
V CEO
max
300
4
500
300
100
1.2
1.0
0.8
0.6
0.4
0.2
50
30
10
0.5
0
0
20
1
Ambient temperature Ta (°C)
Collector current I
40
3
60
P
f
T
C
80
– I
– Ta
C
10
100
C
V CE = 30 V
Common emitter
Ta = 25°C
(mA)
120
2
10
30
140
2006-11-09
2SC2229
100
160