2sc2570a Renesas Electronics Corporation., 2sc2570a Datasheet - Page 3

• Manufacturer Part Number: 2sc2570a
• Description: Npn Epitaxial Silicon Rf Transistor For High-frequency Low-noise Amplification
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1 000
800
600
400
200
0.5
0.5
0.2
0.1
50
10
0
5
1
7
5
2
1
0.5
0.5
V
V
CE
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 10 V
= 10 V
1
25
Base to Emitter Voltage V
Ambient Temperature T
0.6
Collector Current I
50
5 7 10
0.7
75
100
C
(mA)
A
BE
0.8
(˚C)
A
Free Air
(V)
= +25 C, unless otherwise specified)
125
50
Data Sheet PU10207EJ01V0DS
150
0.9
70
OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
INPUT CAPACITANCE vs. EMITTER TO BASE VOLTAGE
200
100
0.5
0.3
50
20
10
2
1
0.4
0.5
0.5
1
Collector to Base Voltage V
Emitter to Base Voltage V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1
Collector Current I
C
C
ob
ib
2
3
5
5
10
C
(mA)
EB
V
10
CB
CE
(V)
f = 1 MHz
(V)
= 10 V
2SC2570A
20 30
50
3