2sc2734gtl-e Renesas Electronics Corporation., 2sc2734gtl-e Datasheet - Page 2

• Manufacturer Part Number: 2sc2734gtl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC2734
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Conversion gain
Noise figure
Oscillating output voltage
Rev.2.00 Aug 10, 2005 page 2 of 7
Item
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
V
Cob
I
CE(sat)
h
CG
NF
CBO
OSC
f
FE
T
Min
1.4
20
11
20
—
—
—
—
—
—
3
Typ
140
3.5
0.9
90
15
—
—
—
—
—
9
Max
200
0.5
0.7
1.5
—
—
—
—
—
—
—
Unit
GHz
mV
pF
dB
dB
V
V
V
V
A
I
I
I
V
I
V
V
V
V
f = 900 MHz,
f
f
V
f = 900 MHz,
f
f
V
f = 930 MHz
C
C
E
C
OSC
out
OSC
out
CB
CE
CE
CB
CC
CC
CC
= 10 A, I
= 10 A, I
= 1 mA, R
= 10 mA, I
= 30 MHz
= 30 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 6 V, I
= 6 V, I
= 6 V, I
= 930 MHz (0dBm),
= 930 MHz (0dBm),
Test conditions
C
C
C
C
E
BE
E
C
B
C
E
= 2 mA,
= 2 mA,
= 5 mA,
= 0
= 0
= 0
= 5 mA
= 5 mA
= 0, f = 1 MHz
= 10 mA
=
(Ta = 25°C)