2sc2714 TOSHIBA Semiconductor CORPORATION, 2sc2714 Datasheet - Page 2

• Manufacturer Part Number: 2sc2714
• Description: Toshiba Transistor Silicon Npn Epitaxial Planar Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

y Parameter
L1: 0.8 mmφ silver plated copper wire, 4 T, 10ID, 8 length
(1)
Input conductance
Input capacitance
Reverse transfer admittance
Phase angle of reverse transfer
admittance
Forward transfer admittance
Phase angle of forward transfer
admittance
Output conductance
Output capacitance
(2)
Input conductance
Input capacitance
Reverse transfer admittance
Phase angle of reverse transfer
admittance
Forward transfer admittance
Phase angle of forward transfer
admittance
Output conductance
Output capacitance
Common emitter (V
Common base (V
(typ.)
Characteristics
Characteristics
CE
CE
= 6 V, I
= 6 V, I
Figure 1 NF, G
E
= −1 mA, f = 100 MHz)
E
Symbol
Symbol
= −1 mA, f = 100 MHz)
⎪y
⎪y
|y
|y
C
C
g
g
C
θ
C
θ
g
θ
g
θ
oe
ob
re
re
fe
fe
oe
rb
rb
fb
fb
ob
ie
ib
ie
ib
|
|
⎪
⎪
−105
Typ.
10.2
0.33
Typ.
0.27
−90
−20
−10
165
2
2.9
1.1
1.1
45
34
45
40
34
pe
Test Circuit
Unit
Unit
mS
mS
mS
mS
mS
mS
pF
μS
pF
pF
μS
pF
°
°
°
°
2007-11-01
2SC2714