2sc2690 Renesas Electronics Corporation., 2sc2690 Datasheet - Page 2

• Manufacturer Part Number: 2sc2690
• Description: Npn Silicon Epitaxial Transistor For Low/high Frequency Power Amplification
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
h
Remark Test condition: V
2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
FE
MARKING
CLASSIFICATION
h
FE2
CHARACTERISTICS
Note
Note
60 to 120
µ
s, Duty Cycle ≤ 2%
CE
Note
R
= 5.0 V, I
C
= 0.3 A
SYMBOL
V
V
100 to 200
I
I
h
h
CE(sat)
BE(sat)
C
CBO
EBO
f
FE1
FE2
A
T
ob
Q
= 25°C)
Data Sheet D17501EJ2V0DS
V
V
V
V
I
V
V
C
CB
EB
CE
CE
CE
CB
= 1.0 A, I
= 120. V, I
= 3.0 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 10 V, I
TEST CONDITIONS
160 to 320
B
E
= 0.2 A
C
C
C
C
= 0, f = 1.0 MHz
E
= 0
= 5.0 mA
= 0.3 A
= 0.2 A
P
= 0
MIN.
35
60
TYP.
150
140
175
2SC2690,2690A
0.4
1.0
26
MAX.
320
1.0
1.0
0.7
1.3
UNIT
MHz
µ
µ
pF
V
V
A
A