2sc2650 Inchange Semiconductor Company, 2sc2650 Datasheet

2sc2650

Manufacturer Part Number

2sc2650

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SC2650.pdf (2 pages)

Current page: 1 of 2
Download datasheet (224Kb)

isc

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Switching regulator applicaition.

·High voltage switching application.

·High speed DC-DC converter application.

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

INCHANGE Semiconductor

: V

CBO

CEO

EBO

stg

(BR)CEO

Silicon NPN Power Transistor

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

= 400V(Min)

=25℃

PARAMETER

=25

℃)

-55~150

VALUE

500

400

150

100

UNIT

℃

isc

Product Specification

2SC2650

Related parts for 2sc2650

2sc2650 Summary of contents

Page 1

... Emitter-Base Voltage EBO I Collector Current-Continuous C I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 500 V 400 100 W ℃ 150 ℃ -55~150 isc Product Specification 2SC2650 ...

Page 2

... 400V ; 5A 0.5A 40Ω 200V Duty Cycle≤1% 2 2SC2650 MIN TYP. MAX UNIT 500 V 400 1.5 V 2.0 V μA 100 μs 1.0 μs 2.5 μs 1.0 ...

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