2sc2625l-t3p-t Unisonic Technologies, 2sc2625l-t3p-t Datasheet - Page 3

• Manufacturer Part Number: 2sc2625l-t3p-t
• Description: Npn Epitaxial Silicon Transistor
• Manufacturer: Unisonic Technologies

2SC2625
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
0.05
0.03
0.01
10
12
14
0.5
0.3
0.1
TYPICAL CHARACTERISTICS
0.5
0.3
0.1
8
6
4
2
0
3
1
3
1
0
0.3
0.03
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.05 0.1
2
0.5
Base and Collector Saturation Voltage
Collector Output Characteristics
Collector Emitter Voltage, V
4
Collector Current, I
Collector Current, I
1
Switching Time
0.3 0.5
6
V
V
BE(sat)
CE(sat)
I
B
300mA
200mA
=100mA
8
t
STG
1
C
3
(A)
10
C
(A)
CE
T
T
I
T
I
C
C
(V)
C
C
3
C
t
5
=5I
=5I
ON
=25℃
=25℃
=25℃
12
t
F
B
B1
5
=5I
14
B2
10
10
NPN EPITAXIAL SILICON TRANSISTOR
300
200
100
0.05
0.03
50
30
10
0.5
0.3
0.1
30
10
5
3
1
5
3
1
0.03
1
T
Single Pulse
C
=25℃
0.05 0.1
3
T
Collector Emitter Voltage, V
C
=120℃
5
Collector Current, I
-20℃
-40℃
DC Current Gain
25℃
Safe Operating Area
10
0.3 0.5
50μs
100μs
30
200μs
50
1
500μs
P
100
C
W
(A)
=1ms
CE
QW-R214-009,B
3
(V)
300
V
CE
=5V
5
500
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