2sa2140 Panasonic Corporation of North America, 2sa2140 Datasheet
2sa2140
Manufacturer Part Number
2sa2140
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA2140.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sa2140QP
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power Transistors
2SA2140
Silicon PNP epitaxial planar type
For power amplification
For TV VM circuit
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2004
• Satisfactory linearity of forward current transfer ratio h
• High transition frequency (f
• Full-pack package which can be installed to the heat sink with one
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
screw.
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
60 to 140
T
a
*
= 25°C
Q
T
)
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
P
CBO
I
T
V
CEO
EBO
C
CP
I
I
stg
120 to 240
C
CE(sat)
C
C
h
CBO
t
j
EBO
t
f
CEO
stg
t
on
FE
= 25°C
T
ob
f
P
−55 to +150
Rating
I
V
V
V
I
V
V
I
I
V
−180
−180
C
C
C
B1
−1.5
150
CB
EB
CE
CE
CB
CC
2.0
−6
−3
20
= −10 mA, I
= −1 A, I
= − 0.4 A, Resistance loaded
= 0.04 A, I
SJD00316AED
= −6 V, I
= −5 V, I
= −10 V, I
= −180 V, I
= −10 V, I
= 100 V
FE
B
Conditions
Unit
= − 0.1 A
C
C
°C
°C
B2
W
V
V
V
A
A
B
C
E
= 0
= − 0.1 A
E
= 0
= − 0.2 A, f = 10 MHz
= 0, f = 1 MHz
= − 0.04 A
= 0
Internal Connection
1
9.9
−180
Min
2
±0.3
60
B
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
φ 3.2
Typ
100
0.1
1.0
0.1
30
±0.1
TO-220D-A1 Package
C
E
−100
−100
− 0.5
Max
240
4.6
1: Base
2: Collector
3: Emitter
±0.2
0.55
Unit: mm
2.9
2.6
MHz
Unit
±0.15
µA
µA
pF
µs
µs
µs
V
V
±0.2
±0.1
1
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2sa2140 Summary of contents
Page 1
... Power Transistors 2SA2140 Silicon PNP epitaxial planar type For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio h • High transition frequency ( • Full-pack package which can be installed to the heat sink with one screw. ■ Absolute Maximum Ratings T ...
Page 2
... ( (2) Without heat sink 100 120 140 160 ( °C ) Ambient temperature Safe operation area 10 = 25°C Non repetitive pulse 0 0.01 1 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...