2sa2193 ISAHAYA ELECTRONICS CORPORRATION, 2sa2193 Datasheet
2sa2193
Manufacturer Part Number
2sa2193
Description
Transistor Pnp Smd Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.2SA2193.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
MAXIMUM RATINGS (Ta=25℃)
V
V
Symbol
Symbol
I
I
V
(BR)CEO
h
CE(sat)
V
V
C
T
CBO
EBO
I
P
FE
f
EBO
CBO
CEO
T
stg
ob
T
DESCRIPTION
C
FEATURE
C
APPLICATION
j
ISAHAYA 2SA2193 is a super mini package resin sealed
silicon PNP epitaxial transistor designed for low frequency
voltage amplify application.
・Low collector to emitter saturation voltage
・Excellent linearity of DC forward current gain
・Small packege for easy mounting
For small type machine low frequency voltage amplify
application
VCE(sat)=-0.4V max(@IC=-50mA,IB=-5mA)
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Gain bandwidth product
Collector output capacitance
Junction temperature
Storage temprature
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Parameter
Parameter
-55 ∼ +150
V
V
V
I
V
V
I
C
Ratings
C
CB
EB
CE
CE
CB
=-50mA, I
=-1mA, R
+150
-200
-6.0
-60
-40
150
=-6V, I
=-1V, I
=-60V, I
=-20V, I
=-5V, I
Test conditions
C
C
E
BE
=0mA
B
=0mA, f=1MHz
=-10mA
E
E
=-5mA
=0mA
=10mA
=∞
Unit
mW
mA
℃
℃
V
V
V
FOR LOW FREQUENCY AMPLIFY APPLICATION
1 : BASE
2 : EMITTER
3 : COLLECTOR
2.0
0.9
TERMINAL CONNECTOR
1.30
0.65
0.65
0.7
OUTLINE DRAWING
-40
100
Min
250
0∼0.1
0.425
1
2
SILICON NPN EPITAXIAL TYPE
〈SMALL-SIGNAL TRANSISTOR〉
1.25
2.1
JEDEC : -
JEITA : SC-70
Limits
2SA2193
Typ
MARKING
TYPE NAME
0.425
3
2
0.3
0.15
-400
-0.1
-0.1
Max
300
5.0
Unit:mm
W
hFE ITEM
Unit
MHz
μA
μA
mV
pF
V
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2sa2193 Summary of contents
Page 1
... DESCRIPTION ISAHAYA 2SA2193 is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage amplify application. FEATURE ・Low collector to emitter saturation voltage VCE(sat)=-0.4V max(@IC=-50mA,IB=-5mA) ・Excellent linearity of DC forward current gain ・Small packege for easy mounting ...
Page 2
... BASE TO EMITTER VOLTAGE VBE(V) COLLECTOR EMITTER SATURATION VOLTAGE -1000 Ta=25℃ IC/IB=10 -100 -10 -0.1 -100 COLLECTOR OUTPUT CAPACITANCE 10 1 -0.1 100 〈SMALL-SIGNAL TRANSISTOR〉 2SA2193 SILICON NPN EPITAXIAL TYPE -0.4 -0.6 -0.8 -1.0 VS.COLLECTOR CURRENT -1 -10 -100 COLLECTOR CURRENT IC(mA) VS.COLLECTOR TO BASE VOLTAGE Ta=25℃ IE=0 f=1MHz -1 -10 -100 COLLECTOR TO BASE VOLTAGE VCB(V) ...