2sa2154ct TOSHIBA Semiconductor CORPORATION, 2sa2154ct Datasheet - Page 2
2sa2154ct
Manufacturer Part Number
2sa2154ct
Description
Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA2154CT.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA2154CT
Manufacturer:
TOSHIBA
Quantity:
42 000
-1000
-100
-0.1
-0.01
-120
-100
-10
-0.1
-80
-60
-40
-20
-1
-0
-1
0
-0
-0.1
0
-0
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
-2.0
COMMON EMITTER
Common emitter
I
IC/IB=10
Ta = 100℃
C
-0.2
/I
-1
B
Collector-emitter voltage V
BASE-EMITTER VOLTAGE VBE (V)
Base-emitter voltage V
= 10
COLLECTOR CURRENT IC (mA)
Collector current I
25
-0.4
COMMON EMITTER Ta=25℃
Common emitter
-2
-1
-1.5
VCE(sat) - IC
V
CE (sat)
IB -VBE
-0.6
I
IC - VCE
Ta = 100℃
B
-3
I
C
– V
– V
BE
-0.8
Common emitter
COMMON EMITTER
V
VCE=−6V
– I
CE
CE
-4
C
C
Ta = 25°C
-25
-25
= −6 V
BE
-10
(mA)
-1
CE
-5
IB = -0.1mA
(V)
I
25
B
-1.0
-0.7
-0.5
-0.3
-0.2
= −0.1 mA
(V)
-1.2
-6
-1.4
-100
-7
2
1000
150
140
130
120
110
100
-0.1
100
-10
90
80
70
60
50
40
30
20
10
10
-1
0
-0.1
-0.1
0
Common emitter
COMMON EMITTER
Common emitter
I
20
C
VCE=−6V
COMMON EMITTER
IC/IB=10
/I
AMBIENT TEMPERATURE Ta (°C)
VCE=−1V
B
Ambient temperature Ta (°C)
Ta = 100℃
= 10
COLLECTOR CURRENT IC (mA)
Collector current I
COLLECTOR CURRENT IC (mA)
Collector current I
40
V
V
(10 mm × 10 mm × 1 mmt)
CE
CE
Mounted on FR4 board
-25
= −6 V
= −1 V
-1
-1
VBE(sat) - IC
60
V
BE (sat)
hFE - IC
P
PC- Ta
h
C
FE
25
– Ta
80
– I
– I
C
C
100
C
C
-10
-10
(mA)
(mA)
2SA2154CT
120
2009-04-13
140
-100
-100
160