2sa2182 TOSHIBA Semiconductor CORPORATION, 2sa2182 Datasheet - Page 3

• Manufacturer Part Number: 2sa2182
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
1000
−0.8
−0.6
−0.4
−0.2
100
100
10
10
−1
0.001
0.001
1
1
0
0
Common emitter
Single non-repetitive pulse
VCE = − 5 V
Common emitter
Ta=25℃
VCE= − 10V
Collector-emitter voltage V
−2
Collector current −I
0.01
Collector current −I
25°C
−20mA
0.01
Tc = 100°C
−4
I
h
C
f
FE
T
– V
−25°C
0.1
– I
– I
Common emitter
VCE = − 5 V
Single non-repetitive pulse
CE
C
C
−6
−10 mA
C
0.1
C
CE
(A)
1
(A)
I B = −1 mA
−8
(V)
−5 mA
−4 mA
−2 mA
−3 mA
−10
10
1
3
−1.5
−0.5
0.01
0.1
−2
−1
10
24
20
16
12
0.001
0
1
8
4
0
0
0
Common emitter
VCE = − 5 V
Single non-repetitive pulse
Common emitter
β=10
Single non-repetitive pulse
①
②
−0.2
Tc = 100°C
Base-emitter voltage V
Ambient temperature Ta (°C)
Tc = 100°C
0.01
40
25°C
Collector current −I
−0.4
V
CE (sat)
−0.6
I
① Tc=Ta Infinite heat sink
② No heat sink
P
C
C
25
– V
0.1
80
– Ta
−25°C
−0.8
BE
– I
−25
C
C
BE
−1
(A)
120
1
(V)
−1.2
2006-11-13
2SA2182
160
−1.4
10