2sa2121 TOSHIBA Semiconductor CORPORATION, 2sa2121 Datasheet - Page 3

• Manufacturer Part Number: 2sa2121
• Description: Toshiba Transistor Silicon Pnp Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
500
300
100
−20
−16
−12
10
50
30
10
−8
−4
−0.03
1
−0.01
0
5
0
−25
Tc = 100°C
25
Common emitter
Tc = 25°C
Common emitter
V CE = −5 V
−0.1
Collector-emitter voltage V
−2
Collector current I
Collector current I
−0.3
−500
−0.1
−4
I
hFE – I
C
f
T
−1
– V
– I
−6
−400
C
CE
C
−3
C
C
−8
−1
Common emitter
Tc = 25°C
V CE = −5 V
(A)
(A)
I
CE
−300
B
−200
= −20 mA
−10
−10
(V)
−100
−50
−10
−30
−12
3
−0.05
−0.03
−100
−0.5
−0.3
−0.1
−0.1
−10
−16
−12
−0.03
−5
−3
−1
−1
−8
−4
−0.1
0
0
I C max (pulsed) *
Common emitter
I C / I B = 10 V
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
linearly with increase in
temperature.
I C max (continuous)
Collector-emitter voltage V
−0.1
Base-emitter voltage V
Tc = 100°C
−0.5
Collector current I
−1
Safe Operating Area
−0.3
DC operation
Tc = 25°C
V
−1.0
Tc = 100°C
CE (sat)
I
C
– V
−1
−10
−25
−25
BE
25
– I
−1.5
V CEO max
C
25
−3
C
BE
Common emitter
V CE = −5 V
−100
(A)
1 ms *
CE
−2.0
−10
(V)
10 ms *
100 ms *
(V)
2006-11-16
2SA2121
−1000
−30
−2.5