2sa2122 Panasonic Corporation of North America, 2sa2122 Datasheet
2sa2122
Manufacturer Part Number
2sa2122
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA2122.pdf
(2 pages)
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Transistors
2SA2122
Silicon PNP epitaxial planar type
For general amplifi cation
Complementary to 2SC5950
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
High forward current transfer ratio h
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and automatic
Smini typ package, allowing downsizing of the equipment and automatic
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
High forward current transfer ratio h
High forward current transfer ratio h
insertion through the tape packing
Parameter
Parameter
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
FE
FE
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
V
T
T
T
°C
I
P
I
T
T
T
CBO
CEO
EBO
CP
Symbol
stg
stg
C
V
C
j
j
V
V
V
I
I
h
h
h
CE(sat)
C
CBO
CEO
CBO
f
f
f
CEO
EBO
FE
FE
T
T
ob
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
−100
−200
C
C
E
E
E
C
−60
−50
150
150
−7
CB
CE
CE
CE
CE
CE
CE
CB
CB
=
=
= −10 µA, I
= −2 mA, I
= −100 mA, I
−10 µA, I
= −20 V, I
=
=
=
=
= −10 V, I
= −10 V, I
SJC00332AED
−10 V, I
−10 V, I
B
Unit
mW
C
Conditions
E
E
E
mA
mA
B
C
E
E
E
E
E
E
E
E
E
°C
°C
= 0
V
V
V
= 0
= 0
= 0
B
= 0
= 0
= 0
= −2 mA
= 1 mA, f = 200 MHz
= 1 mA, f = 200 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= −10 mA
Marking Symbol: 7L
1: Base
2: Emitter
3: Collector
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
Min
−60
−50
160
−7
±0.1
±0.2
2
− 0.2
− 0.2
−
Typ
2.2
80
SMini3-G1 Package
−100
− 0.1
− 0.1
−
− 0.5
− 0.5
−
Max
460
0.15
+0.10
–0.05
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sa2122 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplifi cation Complementary to 2SC5950 Features Features High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio h ...
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...