2sa2163 Panasonic Corporation of North America, 2sa2163 Datasheet
2sa2163
Manufacturer Part Number
2sa2163
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA2163.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2sa216300A
Manufacturer:
PANASONIC
Quantity:
20 200
Transistors
2SA2163
Silicon PNP epitaxial planar type
For high frequency amplifi cation
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
High transition frequency f
High transition frequency f
Optimum for high-density mounting and downsizing of the equipment for
Optimum for high-density mounting and downsizing of the equipment for
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise fi gure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
High transition frequency f
High transition frequency f
Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
Parameter
Parameter
T
T
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
V
T
T
T
°C
P
I
T
T
T
CBO
CEO
EBO
Symbol
stg
stg
C
V
C
j
j
I
I
I
V
V
V
h
h
h
CE(sat)
NF
CBO
Z
C
CEO
EBO
f
f
f
FE
FE
BE
BE
T
T
rb
re
−55 to +125
Rating
V
V
V
V
V
I
V
V
V
V
C
−30
−20
−30
100
125
−5
CE
CE
CE
CB
CE
CE
CE
EB
CE
CE
CE
CB
CB
CB
CB
= −10 mA, I
=
=
= −10 V, I
=
=
= −5 V, I
=
=
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
SJC00336AED
−10 V, I
−20 V, I
−10 V, I
C
Unit
mW
Conditions
mA
C
B
C
E
E
E
E
E
E
E
E
E
E
E
E
E
E
E
B
°C
°C
= 0
V
V
V
= −1 mA
= 0
= 0
= 0
= −1 mA
= 1 mA, f = 200 MHz
= 1 mA, f = 200 MHz
= 1 mA, f = 5 MHz
= 1 mA, f = 5 MHz
= 1 mA, f = 2 MHz
= 1 mA, f = 2 MHz
= 1 mA, f = 10.7 MHz
= 1 mA, f = 10.7 MHz
= −1 mA
Marking Symbol: 6J
1: Base
2: Emitter
3: Collector
3
1.00
±0.05
Min
150
70
2
1
− 0.7
− 0.7
−
− 0.1
− 0.1
−
Typ
3
300
2.8
1.2
22
0.25
±0.05
0.65
0.39
−100
− 0.1
− 0.1
−
±0.01
Max
−10
220
ML3-N2 Package
4.0
2.0
50
0.25
+0.01
−0.03
±0.05
1
2
Unit: mm
0.05
MHz
Unit
µA
µA
µA
±0.03
dB
pF
V
V
Ω
1
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2sa2163 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2163 Silicon PNP epitaxial planar type For high frequency amplifi cation Features Features High transition frequency f High transition frequency f High transition frequency f High transition frequency f ...
Page 2
... C 160 V = − 85°C a 120 25°C −25° − 0.1 −1 −10 −100 ( mA ) Collector current I C SJC00336AED 2SA2163_I - V − 200 µ 25° 180 µA −16 160 µA 140 µA 120 µA −12 100 µ ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...