2sa2079 Panasonic Corporation of North America, 2sa2079 Datasheet
2sa2079
Manufacturer Part Number
2sa2079
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA2079.pdf
(3 pages)
Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
High forward current transfer ratio h
Suitable for high-density mounting and douwsizing of the equipment for
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Parameter
Parameter
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
FE
a
= 25°C
Symbol
V
V
V
T
I
P
I
T
CBO
CEO
EBO
Symbol
CP
stg
C
V
C
j
V
V
V
I
I
h
CE(sat)
C
CBO
CEO
CBO
CEO
EBO
f
FE
T
ob
–55 to +125
Rating
I
I
I
V
V
V
I
V
V
–100
–200
C
C
E
C
–45
–45
100
125
CB
CE
CE
CB
CB
–7
= –10 µA, I
= –2 mA, I
= –10 µA, I
= –100 mA, I
= –10 V, I
= –10 V, I
= –20 V, I
= –10 V, I
= –10 V, I
SJC00326AED
B
E
C
Unit
mW
Conditions
E
B
C
E
E
mA
mA
°C
°C
= 0
V
V
V
= 0
= 0
B
= 0
= 0
= –2 mA
= 1 mA, f = 200 MHz
= 0, f = 1 MHz
= –10 mA
Marking Symbol : 3D
1: Base
2: Emitter
3: Collector
3
1.00
±0.05
Min
–45
–45
180
–7
2
1
– 0.2
Typ
3
2.2
80
0.25
±0.05
0.65
0.39
– 0.1
–100
– 0.5
Max
±0.01
390
ML3-N2 Package
+0.01
−0.03
0.25
±0.05
1
2
Unit: mm
0.05
MHz
Unit
µA
µA
pF
±0.03
V
V
V
V
1
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2sa2079 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2079 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5848 Features High forward current transfer ratio h FE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package Package: 0.6 mm × ...
Page 2
... V CE −100 T = 75°C −25°C a −80 −60 25°C −40 − − 0.2 − 0.6 − 0.8 −1.0 −1.2 − 0 Base-emitter voltage V BE 2SA2079_C - MHz T = 25° −8 −16 −24 −32 − Collector-base voltage V CB ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...