hn7g06fu TOSHIBA Semiconductor CORPORATION, hn7g06fu Datasheet
hn7g06fu
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hn7g06fu Summary of contents
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... CEO EBO I 100 mA C Symbol Rating Unit P * 200 150 °C j −55~150 T °C stg 1 HN7G06FU Unit: mm 1.EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.COLLECTOR1 (C1) JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight: 0.0068 g (typ.) Marking Type Name hFE Rank Equivalent Circuit ...
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... 0 I(OFF MHz ⎯ R1 ⎯ R1/R2 2 HN7G06FU Min Typ. Max Unit ⎯ ⎯ −100 nA ⎯ ⎯ −100 nA ⎯ 300 1000 ⎯ −15 −30 mV ⎯ −110 −250 ⎯ −0.87 −1.2 V ⎯ ...
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... COMMON EMITTER IC/ ℃ -0.1 -100 -1000 - -0.1 100 10 -25 1 -1.2 -1.6 - -0.1 COLLECTOR-BASE VOLTAGE VCB (V) 3 HN7G06FU hFE - IC COMMON EMITTER VCE = - 100°C 25 -25 -1 -10 -100 -1000 COLLECTOR CURRENT IC (A) VBE(sat -10 -100 -1000 COLLECTOR CURRENT IC (A) Cob - VCB 1MHz Ta = 25℃ ...
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... Q2 4 HN7G06FU 2005-03-29 ...
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... Q1, Q2 common * P – 400 300 200 100 100 125 AMBIENT TEMPERATURE Ta (°C) *:Total rating 150 175 5 HN7G06FU 2005-03-29 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 HN7G06FU 030619EAA 2005-03-29 ...