hn7g05fu TOSHIBA Semiconductor CORPORATION, hn7g05fu Datasheet - Page 2

• Manufacturer Part Number: hn7g05fu
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
Q2
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistor
Resistor ratio
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
(
(MOSFET)
Transistor
Characteristic
Characteristic
Electrical Characteristics
)
Electrical Characteristics
V
R
V
Symbol
V
Symbol
(BR) DSS
V
R1/R2
DS (ON)
CE (sat)
⎪Y
I
I
I
I
I
I(OFF)
CBO
CEO
h
EBO
I(ON)
GSS
DSS
R1
V
FE
th
fs
⎪
V
V
V
V
I
V
V
V
I
V
V
V
I
(Ta = 25°C)
C
D
D
CB
CE
EB
CE
CE
CE
GS
DS
DS
DS
= −5 mA, I
= 100 µA, V
= 10 mA V
(Ta = 25°C)
2
= −50 V, I
= −50 V, I
= −5 V, I
= −5 V, I
= −0.2 V, I
= −5 V, I
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
Test Condition
Test Condition
D
D
B
C
C
C
GS
= 0.1 mA
= 10 mA
DS
GS
E
E
GS
= −0.25 mA
= 0
C
= −10 mA
= −0.1 mA
= 0
= 0
= 2.5 V
= −5 mA
⎯
⎯
= 0
= 0
= 0
−0.82
−1.1
−1.0
3.29
Min
Min
0.9
0.5
30
20
20
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
Typ.
4.7
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
20
HN7G05FU
2005-03-23
−1.52
−100
−500
Max
−0.3
−2.0
−1.5
6.11
Max
1.1
1.5
40
⎯
⎯
⎯
1
1
Unit
Unit
mA
mS
kΩ
nA
nA
µA
µA
V
V
V
V
V
Ω