hn7g01fu TOSHIBA Semiconductor CORPORATION, hn7g01fu Datasheet - Page 2

• Manufacturer Part Number: hn7g01fu
• Description: Toshiba Multi Chip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
Q2
Application Example
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Note 2: h
Gate leakage current
Drain-source breakdown voltage
Drain current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
(transistor)
(MOS-FET)
Characteristics
FE
Characteristics
classification A: 300~600, B: 500~1000
Electrical Characteristics
Electrical Characteristics
(power management switch)
V
V
V
R
CE (sat) (1)
CE (sat) (2)
V
Symbol
Symbol
(BR) DSS
DS (ON)
BE (sat)
ïY
I
I
I
I
CBO
h
EBO
GSS
DSS
V
(Note 2)
FE
th
fs
ï
V
V
V
I
I
I
V
I
V
V
V
I
C
C
C
D
D
CB
EB
CE
GS
DS
DS
DS
= -10 mA, I
= -200 mA, I
= -200 mA, I
= 100 mA, V
= 10 mA, V
(Ta = = = = 25°C)
(Ta = = = = 25°C)
= -5 V, I
= -15 V, I
= -2 V, I
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
2
D
D
Test Condition
Test Condition
C
C
GS
= 0.1 mA
= 10 mA
B
GS
DS
E
GS
= 0
= -10 mA
B
B
= -0.5 mA
= 0
= -10 mA
= -10 mA
= 2.5 V
= 0
= 0
= 0
Min
300
Min
0.5
¾
¾
¾
¾
¾
¾
20
¾
20
¾
-0.87
-110
Typ.
Typ.
-15
20
¾
¾
¾
¾
¾
¾
¾
¾
HN7G01FU
2003-03-27
1000
-250
-0.1
-0.1
-1.2
Max
Max
-30
1.5
40
¾
¾
1
1
Unit
Unit
mA
mV
mS
mA
mA
mA
W
V
V
V