2sc6061 TOSHIBA Semiconductor CORPORATION, 2sc6061 Datasheet - Page 4

• Manufacturer Part Number: 2sc6061
• Description: Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
0.1
10
1
0.1
※Single non-repetitive pulse
Ta = 25°C
I C max (pulsed)*
I C max
Note that the curves for 100
ms, 10 s and DC operation
will be different when the
devices aren’t mounted on an
FR4 board (glass-epoxy, 1.6
mm thick, Cu area: 645 mm
Single-device operation
These characteristic curves
must be de-rated linearly with
increase in temperature.
(continuous)
I C max (連続)
I C max (パルス)*
DC operation
Ta = 25 °C
直流動作*
Collector -emitter voltage V
1000
100
1
10
Safe Operating Area
1
0.001
10 ms※
2
).
10
100 ms※*
0.01
10 μs※
CE
100
100 ms※
(V)
V CEO max
1 ms※
10 s※*
μs
0.1
1000
Pulse width t
r
th
1
– t
4
w
w
(s)
Curves apply only to limited areas of
thermal resistance.
Single non-repetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy;
1.6 mm thick; Cu area, 645 mm
10
100
2
)
1000
2006-11-13
2SC6061