2sc6072 TOSHIBA Semiconductor CORPORATION, 2sc6072 Datasheet - Page 3

• Manufacturer Part Number: 2sc6072
• Description: Toshiba Multi-chip Device Silicon Npn Epitaxial Transistor Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.01
100
0.1
10
10
2.0
1.6
1.2
0.8
0.4
0.0001
0.001
1
1
0
0
Common emitter V CE = 5 V
Single non-repetitive pulse
Common emitter β=10
Single non-repetitive pulse
100
300
Collector-emitter voltage V
0.001
2
Collector current I
0.01
Collector current I
25°C
25°C
V
0.01
Tc= −25°C
4
BE (sat)
I
h
Tc = 100°C
C
FE
– V
0.1
– I
−25°C
Common emitter Tc=25℃
Single non-repetitive pulse
CE
C
– I
0.1
6
100°C
C
50
C
C
CE
(A)
(A)
1
1
I B = 1 mA
8
(V)
30
10
5
3
10
10
10
3
0.001
0.01
2.0
1.0
0.5
0.1
1.5
0.001
0
1
0
Common emitter V CE = 5 V
Single non-repetitive pulse
Common emitter β=10
Single non-repetitive pulse
0.2
Base-emitter voltage V
0.01
Collector current I
Tc = 100°C
0.4
V
Tc = 100℃
CE (sat)
I
−25°C
C
– V
0.6
0.1
BE
– I
25°C
C
0.8
C
BE
25℃
(A)
−25℃
1
(V)
1.0
2009-12-21
2SC6072
1.2
10