2sc6026ct TOSHIBA Semiconductor CORPORATION, 2sc6026ct Datasheet - Page 2

• Manufacturer Part Number: 2sc6026ct
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
120
100
0.01
100
80
60
40
20
0.1
0.1
10
0
1
1
0.1
0
0
2.0
Ta=100℃
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER
VCE=6V
1
COLLECTOR CURRENT IC (mA)
0.2
BASE-EMITTER VOLTAGE VBE (V)
1.5
Ta=100℃
COMMON EMITTER Ta=25℃
1
2
0.4
25℃
VCE(sat) - IC
25℃
IC - VCE
IB - VBE
1.0
0.6
3
10
COMMON EMITTER
IC/IB=10
0.8
4
IB=0.1mA
-25℃
-25℃
0.7
5
1
100
0.2
0.5
0.3
1.2
6
1000
1.4
7
2
1000
150
140
130
120
110
100
0.1
100
90
80
70
60
50
40
30
20
10
10
10
0
1
0.1
0.1
0
20
COLLECTOR CURRENT IC (mA)
Ta=100℃
COMMON EMITTER
AMBIENT TEMPERATURE Ta (°C)
Ta=100℃
Mounted on FR4 board
(10 mm × 10 mm × 1 mmt)
VCE=6V
VCE=1V
COLLECTOR CURRENT IC (mA)
40
1
1
25℃
VBE(sat) - IC
60
hFE - IC
25℃
PC - Ta
-25℃
80
10
10
COMMON EMITTER
IC/ IB=10
-25℃
100 120 140 160
100
2SC6026CT
100
2009-04-13
1000
1000