2n3507a SEMICOA, 2n3507a Datasheet

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2n3507a

Manufacturer Part Number
2n3507a
Description
Silicon Npn Transistor
Manufacturer
SEMICOA
Datasheet
Copyright© 2007
Rev. E
Description
SEMICOA offers:
• Screening and processing per MIL-PRF-19500
• JAN level (2N3507AJ)
• JANTX level (2N3507AJX)
• JANTXV level (2N3507AJV)
• JANS level (2N3507AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
• Radiation testing (total dose) upon request
Absolute Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
Derate linearly above 25
Power Dissipation, T
Derate linearly above 25
Thermal Resistance
Operating Junction Temperature
Storage Temperature
2072 for JANTXV and JANS
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
A
C
Parameter
= 25
= 25
O
O
C
C
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
O
O
C
C
www.SEMICOA.com
SEMICOA
Appendix E
Symbol
V
V
V
R
T
P
P
T
I
CEO
CBO
EBO
STG
θJA
C
T
T
J
Applications
• General purpose switching transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document:
Benefits
• Qualification Levels: JAN, JANTX,
• Radiation testing available
MIL-PRF-19500/349
JANTXV and JANS
T
C
-65 to +200
= 25°C unless otherwise specified
Rating
5.71
28.6
175
50
80
5
3
1
5
Silicon NPN Transistor
2N3507A
D a ta S h e e t
mW/°C
mW/°C
°C/W
Volts
Volts
Volts
Unit
°C
W
W
A
Page 1 of 2

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2n3507a Summary of contents

Page 1

... Screening and processing per MIL-PRF-19500 • JAN level (2N3507AJ) • JANTX level (2N3507AJX) • JANTXV level (2N3507AJV) • JANS level (2N3507AJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact SEMICOA for special configurations www ...

Page 2

... 150 1 150 SEMICOA www.SEMICOA.com 2N3507A Silicon NPN Transistor characteristics specified at T Min Typ Max 1.5 Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Min Typ Max 35 175 ...

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