2sc5926 Panasonic Corporation of North America, 2sc5926 Datasheet

2sc5926

Manufacturer Part Number

2sc5926

Description

Silicon Npn Triple Diffusion Planar Type

Manufacturer

Panasonic Corporation of North America

Datasheet

1.2SC5926.pdf (2 pages)

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Power Transistors

2SC5926

Silicon NPN triple diffusion planar type

For power amplification

■ Features

■ Absolute Maximum Ratings T

Note) * : Non-repetitive peak collector current

■ Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2004

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

• Allowing supply with the radial taping

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Turn-on time

Storage time

Fall time

2. * 1: Pulse measurement

* 2: Rank classification

Parameter

Rank

Parameter

FE1

500 to 1 500

* 1

= 25°C

Symbol

which has satisfactory linearity.

Symbol

= 25°C ± 3°C

1 300 to 2 300

CBO

CEO

EBO

stg

FE1

CE(sat)

CBO

CEO

EBO

CEO

FE2

stg

= 25°C

* 2

CE(sat)

−55 to +150

Rating

150

2.0

= 10 mA, I

= 1 A, I

= 1 A, Resistance loaded

= 0.1 A, I

SJD00326AED

= 40 V, I

= 6 V, I

= 4 V, I

= 80 V, I

= 50 V

= 20 mA

Conditions

Unit

= 3 A

= 0

= 0.5 A

°C

= 0

= − 0.1 A

Internal Connection

0.65

0.35

2.5

±0.1

±0.2

1 2 3

10.0

Min

500

100

0.2

1.5

0.1

±0.2

2.5

0.65

1.05

0.55

±0.2

Typ

±0.1

1.48

1.2

1.0

±0.1

±0.2

MT-4-A1 Package

2 300

Max

100

0.7

5.0

1: Base

2: Collector

3: Emitter

±0.1

0.55

Unit: mm

2.25

Unit

C 1.0

µA

±0.1



µs

±0.2

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