2sc5954q Panasonic Corporation of North America, 2sc5954q Datasheet

2sc5954q

Manufacturer Part Number

2sc5954q

Description

Silicon Npn Triple Diffusion Planar Type For Power Amplification With High Forward Current Transfer Ratio

Manufacturer

Panasonic Corporation of North America

Datasheet

1.2SC5954Q.pdf (2 pages)

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Power Transistors

2SC5954

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

I Features

I Absolute Maximum Ratings T

I Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: July 2004

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

• Full-pack package which can be installed to the heat sink with one

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

screw.

2. * : Rank classification

Rank

Parameter

FE1

500 to 1 500

= 25°C

Symbol

which has satisfactory linearity.

= 25°C ± 3°C

Symbol

1 300 to 2 300

CBO

CEO

EBO

stg

CE(sat)

FE1

CBO

CEO

EBO

CEO

FE2

stg

= 25°C

CE(sat)

−55 to +150

Rating

150

2.0

= 10 mA, I

= 1 A, I

= 1 A, Resistance loaded

= 0.1 A, I

SJD00319AED

= 80 V, I

= 40 V, I

= 6 V, I

= 4 V, I

= 10 V, I

= 50 V

= 20 mA

Conditions

Unit

= 0

= 0.5 A

= 3 A

°C

= 0

= 0.1 A, f = 10 MHz

= − 0.1 A

Internal Connection

9.9

Min

500

100

±0.3

2.54

5.08

0.8

1.6

1.4

±0.1

±0.2

±0.30

±0.50

±0.2

φ 3.2

Typ

200

0.2

1.5

0.1

±0.1

TO-220D-A1 Package

2 300

Max

100

0.6

4.6

1: Base

2: Collector

3: Emitter

±0.2

0.55

Unit: mm

2.9

2.6

MHz

Unit

±0.15

µA



µs

±0.2

±0.1

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2sc5954q Summary of contents

Page 1

Power Transistors 2SC5954 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio I Features • High forward current transfer ratio h FE • Low collector-emitter saturation voltage V • Full-pack package which can be ...

Page 2

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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