2sc5890fs-tl-e Renesas Electronics Corporation., 2sc5890fs-tl-e Datasheet

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2sc5890fs-tl-e

Manufacturer Part Number
2sc5890fs-tl-e
Description
Transistors Silicon Npn Epitaxial Uhf / Vhf Wide Band Amplifier Uhf / Vhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5890FS-TL-E
Manufacturer:
RENESAS
Quantity:
42 000
Part Number:
2SC5890FS-TL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
2SC5890
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
Features
Outline
Note: Marking is “FS-”.
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Rev.1.00 Aug 10, 2005 page 1 of 13
High gain bandwidth product:
f
High power gain and low noise figure;
PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz
High collector power dissipation:
Pc = 700 mW
High withstanding to ESD of collector to emitter:
Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition.
T
= 7.8 GHz typ.
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
when using alumina ceramic board
Item
(25 x 60 x 0.7 mm)
3
Symbol
V
V
V
Tstg
Pc
CBO
CEO
EBO
I
Tj
C
2
1
–55 to +150
Ratings
700*
150
1.5
20
12
75
(Previous ADE-208-1533)
1. Emitter
2. Base
3. Collector
REJ03G0763-0100
Aug.10.2005
Unit
mW
mA
°C
°C
V
V
V
(Ta = 25°C)
Rev.1.00

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