2sc5813 Panasonic Corporation of North America, 2sc5813 Datasheet
2sc5813
Manufacturer Part Number
2sc5813
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5813.pdf
(3 pages)
Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
■ Absolute Maximum Ratings T
Note) * : Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Low collector-emitter saturation voltage V
• Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing
2. * : Pulse measurement
Parameter
Parameter
*
*
*
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
stg
C
CE(sat)
C
C
h
CBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
CE(sat)
−55 to +150
Rating
I
I
I
V
V
I
V
V
C
C
E
C
600
150
CB
CE
CB
CB
1.5
80
80
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 1 A, I
5
3
SJC00285BED
= 2 V, I
= 40 V, I
= 10 V, I
= 10 V, I
B
B
= 20 mA
C
C
E
Conditions
Unit
mW
E
E
E
= 0
= 100 mA
°C
°C
= 0
= 0
V
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0, f = 1 MHz
Marking Symbol: 5H
10˚
(0.95) (0.95)
1
2.90
1.9
+0.20
–0.05
±0.1
Min
200
0.40
3
80
80
5
2
+0.10
–0.05
Typ
350
180
15
Mini3-G1 Package
Max
500
0.1
25
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
+0.10
–0.06
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1
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2sc5813 Summary of contents
Page 1
... Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage V • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... 800 600 400 200 100 120 140 160 ( °C ) Ambient temperature T a CE(sat 0.1 25°C = 75° −25°C 0.01 0.001 0.01 0 Collector current 0 0.8 2 2.0 mA ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...