2sc5850ldtl-e Renesas Electronics Corporation., 2sc5850ldtl-e Datasheet - Page 2

• Manufacturer Part Number: 2sc5850ldtl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC5850
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Notes: 1. The 2SC5850 is grouped by h
Mark
h
Rev.1.00 Aug 10, 2005 page 2 of 5
FE
Grade
LB
100 to 200
Item
B
LC
160 to 320
C
FE
Symbol
V
V
V
V
as follows.
(BR)CBO
(BR)CEO
(BR)EBO
h
I
I
CE(sat)
V
CBO
EBO
FE
BE
LD
250 to 500
*
1
D
Min
100
50
40
5
Typ
Max
0.75
500
0.5
0.5
0.2
Unit
V
V
V
V
V
A
A
I
I
I
V
V
V
I
V
C
C
E
C
CB
EB
CE
CE
= 10 A, I
= 1 mA, R
= 10 A, I
= 10 mA, I
= 2 V, I
= 30 V, I
= 12 V, I
= 12 V, I
Test conditions
C
C
E
BE
E
C
B
C
= 0
= 0
= 0
= 0
= 1 mA
= 2 mA
= 2 mA
=
(Ta = 25°C)