2sc5761-t2 Renesas Electronics Corporation., 2sc5761-t2 Datasheet

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2sc5761-t2

Manufacturer Part Number
2sc5761-t2
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Quantity
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Part Number:
2SC5761-T2
Manufacturer:
NEC
Quantity:
3 000
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
FEATURES
• Ideal for low noise high-gain amplification
• Maximum stable power gain: MSG = 20.0 dB TYP. @ V
• SiGe technology (f
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
2SC5761
2SC5761-T2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Junction to Case Resistance
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
NF = 0.9 dB TYP. @ V
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The unit sample quantity is 50 pcs.
Parameter
Parameter
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
T
= 60 GHz, f
50 pcs (Non reel)
3 kpcs/reel
CE
LOW NOISE HIGH-GAIN AMPLIFICATION
= 2 V, I
2
Quantity
1.0 mm (t) glass epoxy substrate
NPN SiGe RF TRANSISTOR FOR
max
C
Symbol
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
= 5 mA, f = 2 GHz
P
R
= 60 GHz)
V
V
V
T
tot
th (j-c)
CBO
CEO
I
T
The mark ! shows major revised points.
EBO
stg
C
Note
j
A
= +25 C)
DATA SHEET
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
65 to +150
Ratings
Value
150
150
8.0
2.3
1.2
35
80
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Unit
mW
Unit
mA
C/W
V
V
V
Supplying Form
C
C
NEC Compound Semiconductor Devices 2001, 2003
2SC5761

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2sc5761-t2 Summary of contents

Page 1

... Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity 2SC5761 50 pcs (Non reel) 2SC5761-T2 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Parameter Collector to Base Voltage ...

Page 2

... mA MHz CB E Note mA GHz mA GHz mA GHz 350 s, Duty Cycle 2% Data Sheet PU10212EJ02V0DS 2SC5761 MIN. TYP. MAX. Unit 200 nA 200 nA 200 400 16.0 18.0 dB 0.9 1.1 dB 0.17 0.22 pF 18.0 20.0 dB 12.0 dBm 22 ...

Page 3

... COLLECTOR TO EMITTER VOLTAGE 0.8 1.0 0 (V) Collector to Emitter Voltage 000 100 10 100 0.1 Data Sheet PU10212EJ02V0DS 2SC5761 MHz Collector to Base Voltage V (V) CB 190 A 160 A 130 A 100 ( CURRENT GAIN vs. ...

Page 4

... MAG 0 MAG 10 Data Sheet PU10212EJ02V0DS 2SC5761 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT = 100 Collector Current I (mA) C INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 1 ...

Page 5

... COLLECTOR CURRENT GHz MAG 21e Collector Current I (mA) C Data Sheet PU10212EJ02V0DS INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT GHz 100 1 Collector Current I 100 2SC5761 MSG 21e 10 100 (mA ...

Page 6

... CURRENT vs. INPUT POWER GHz (RF OFF –5 10 –10 0 –15 0 –20 –15 Input Power Data Sheet PU10212EJ02V0DS 2SC5761 out –10 –5 0 (dBm) in ...

Page 7

... Output Power (at 1 tone) P (dBm) out 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER –5 0 Output Power (at 1 tone Data Sheet PU10212EJ02V0DS 2SC5761 GHz off set = 1 MHz (dBm) out 7 ...

Page 8

... Collector Current I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 100 1 Collector Current I Data Sheet PU10212EJ02V0DS 2SC5761 GHz 0 10 100 (mA ...

Page 9

... Collector Current I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 100 1 Collector Current I Data Sheet PU10212EJ02V0DS 2SC5761 100 (mA 100 (mA ...

Page 10

... Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com/ 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 100 1 Collector Current I Data Sheet PU10212EJ02V0DS 2SC5761 100 (mA) C ...

Page 11

... EQUAL NF CIRCLE GHz Unstable Area GHz Unstable Area NF = 0.8 dB min opt 1 0.85 dB min opt 1.0 dB Data Sheet PU10212EJ02V0DS 2SC5761 11 ...

Page 12

... PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 12 2.05 ± 0.1 1.25 ± 0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base Data Sheet PU10212EJ02V0DS 2SC5761 ...

Page 13

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for Data Sheet PU10212EJ02V0DS 2SC5761 The M8E 00 0110 13 ...

Page 14

... TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk FAX: +886-2-2545-3859 FAX: +82-2-558-5209 2SC5761 0302-1 ...

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