2sc5706d SeCoS Halbleitertechnologie GmbH, 2sc5706d Datasheet
2sc5706d
Manufacturer Part Number
2sc5706d
Description
Silicon General Purpose Transistor
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.2SC5706D.pdf
(3 pages)
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
FEATURES
•
•
•
•
MARKING : 5706
MAXIMUM RATINGS* T
ELECTRICAL CHARACTERISTICS (Tamb=25
(With Date Code)
Large current capacitance
Low collector-to-emitter saturation voltage
High-speed switching
High allowable power dissipation
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current (Pulse)
Gain-Bandwidth Product
Base Saturation Voltage
Total Power Dissipation
Collector-Base Voltage
Junction Temperature
Emitter-Base Voltage
Storage Temperature
Output Capacitance
Elektronische Bauelemente
Collector Current
DC Current Gain
Turn-On Time
Base Current
Storage Time
Parameter
Parameter
Fall Time
A
=25 unless otherwise noted
*V
*V
*V
P
Symbol
BV
BV
BV
BV
CE
CE
D
*h
I
I
BE
C
tstg
Symbol
CBO
EBO
ton
RoHS Compliant Product
(TC=25°C)
fT
tf
CBO
CEO
EBO
(sat)1
(sat)2
FE
CES
ob
V
V
V
V
T
I
(sat)
CBO
I
P
CBO
CEO
EBO
CES
STG
CP
I
T
B
D
j
O
C
Min
200
unless otherwise specified)
80
80
50
6
-
-
-
-
-
-
-
-
-
-
2. 30
Typ.
400
300
15
35
20
-55~+150
-
-
-
-
-
-
-
-
-
-
Ratings
+150
0. 10
80
80
50
1.2
7.5
0.8
6
15
5
B
General Purpose Transistor
Max
135
240
560
1.2
5. 30
6. 50
1
1
-
-
-
-
-
-
-
-
-
C
2SC5706
C
Any changing of specification will not be informed individual
0. 15
0. 10
NPN Silicon
Unit.
MHz
E
mV
mV
µA
µA
pF
ns
ns
ns
V
V
V
V
V
0. 80
2. 30
0. 60
TO-252
0. 10
0. 10
0. 10
Test Conditions
I
I
I
I
V
V
I
I
I
V
V
V
See specified test circuit.
See specified test circuit.
See specified test circuit.
C
C
C
E
C
C
C
CB
EB
CE
CE
CB
=10µA, I
=10µA, I
=100µA, R
=1mA, R
=1A, I
=2A, I
=2A, I
0. 51
=4V, I
=40V, I
=2V, I
=10V, I
=10V, f=1MHz
0
0. 51
0. 10
0. 05
Unit
B
B
B
0. 10
5
°C
°C
W
W
V
V
V
V
A
A
A
=50mA
=100mA
=100mA
C
C
C
E
BE
=0
C
E
=500mA
1. 20
=0
=0
=0
=500mA
BE
=∞
D
0
0. 51
=0
9
5
2. 30
0. 10
Page 1 of 3
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2sc5706d Summary of contents
Page 1
Elektronische Bauelemente FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation MARKING : 5706 (With Date Code) MAXIMUM RATINGS* T =25 unless otherwise noted A Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter ...
Page 2
... Elektronische Bauelemente SwitchingTimeTest Circuit Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 2SC5706D NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page ...
Page 3
... Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 2SC5706D NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page ...