2sc5594xp-tl-e Renesas Electronics Corporation., 2sc5594xp-tl-e Datasheet
2sc5594xp-tl-e
Available stocks
Related parts for 2sc5594xp-tl-e
2sc5594xp-tl-e Summary of contents
Page 1
Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features High gain bandwidth product GHz typ. T High power gain and low noise figure ; typ 1.2 dB typ. at ...
Page 2
Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Rev.2.00 Aug 10, 2005 page ...
Page 3
Main Characteristics Maximum Collector Dissipation Curve 200 150 100 100 Ambient Temperature Collector Output Capacitance vs. Collector to Base Voltage 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1 Collector to Base Voltage Power Gain ...
Page 4
Rev.2.00 Aug 10, 2005 page Parameter vs. Collector Current 2GHz Collector ...
Page 5
S11 Parameter vs. Frequency −.2 −.4 −.6 −.8 −1 Condition ; V CE 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90° 120° 150° 180° ...
Page 6
Sparameter S11 f (MHz) MAG ANG 100 0.577 –24.5 200 0.560 –49.8 300 0.541 –72.2 400 0.504 –90.2 500 0.495 –104.5 600 0.477 –116.9 700 0.458 –126.4 800 0.456 –134.5 900 0.448 –142.5 1000 0.435 –147.9 1100 0.438 –153.6 ...
Page 7
... A-A Section B-B Section Ordering Information Part Name 2SC5594XP-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page Package Name MASS[Typ.] CMPAK-4(T) / CMPAK-4(T)V ...
Page 8
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...