2sc5555zd-tr-e Renesas Electronics Corporation., 2sc5555zd-tr-e Datasheet - Page 2

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2sc5555zd-tr-e

Manufacturer Part Number
2sc5555zd-tr-e
Description
Transistors Silicon Npn Epitaxial Vhf / Uhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC5555
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Rev.3.00 Nov 14, 2006 page 2 of 7
Item
Symbol
V
(BR)CBO
Cob
I
I
I
h
PG
NF
CBO
CEO
EBO
f
FE
T
Min
6.5
15
50
11
0.55
Typ
100
1.1
14
9
Max
0.35
0.75
160
1.7
1
1
GHz
Unit
mA
pF
dB
dB
V
A
A
I
V
V
V
V
V
V
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A, I
= 1.5 V, I
= 12 V, I
= 8 V, R
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Test Conditions
C
E
C
C
C
E
BE
E
= 0, f = 1 MHz
= 5 mA
= 5 mA
= 5 mA
= 5 mA
C
= 0
= 0
= 0
=
(Ta = 25°C)

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