2sc5507-t2 Renesas Electronics Corporation., 2sc5507-t2 Datasheet - Page 2

• Manufacturer Part Number: 2sc5507-t2
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
FE
Junction to Case Resistance
Junction to Ambient Resistance
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
3. MSG =
4. Collector current when P
Parameter
Parameter
S
S
50 to 100
21
12
T78
FB
Symbol
O (1 dB)
R
R
th j-c
th j-a
MSG
Symbol
S
h
P
C
OIP
FE
I
I
O (1 dB)
re
NF
CBO
EBO
f
21e
Note 1
T
Note 2
is output
Note 3

3
µ
A
2
s, Duty Cycle ≤ 2%
Data Sheet PU10522EJ01V0DS
= +25°C)
V
V
V
V
V
V
Z
V
V
V
V
S
CB
EB
CE
CE
CE
CE
CB
CE
CE
CE
= Z
= 5 V, I
= 1 V, I
= 2 V, I
= 3 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
Ratings
opt
240
650
Test Conditions
C
E
C
C
C
E
C
C
C
C
= 0 mA
= 0 mA
= 5 mA
= 10 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 0 mA, f = 1 MHz
= 5 mA, f = 2 GHz
= 5 mA
= 5 mA
= 2 mA, f = 2 GHz,
Note 4
Note 4
, f = 2 GHz
, f = 2 GHz
°C/W
°C/W
Unit
MIN.
50
20
14
−
−
–
−
−
−
−
TYP.
0.08
1.2
70
25
17
22
15
−
−
5
MAX.
0.12
100
100
100
1.5
−
−
−
−
−
2SC5507
dBm
dBm
GHz
Unit
nA
nA
dB
dB
dB
pF
−