2sc5208 TOSHIBA Semiconductor CORPORATION, 2sc5208 Datasheet - Page 3

• Manufacturer Part Number: 2sc5208
• Description: Silicon Npn Triple Diffused Type High-voltage Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
1000
0.05
0.03
800
600
400
200
800
600
400
200
0.5
0.3
0.1
10
0
5
3
1
0
0
1
0
Common emitter
Ta = 25°C
Collector-emitter voltage V
Common emitter
I C /I B = 10
0.2
Base-emitter voltage V
3
2
Collector current I
Ta = 100°C
0.4
10
4
V
Ta = 100°C 25
CE (sat)
I
−40
I
C
C
– V
– V
30
0.6
6
25
CE
BE
80
– I
C
100
C
0.8
8
I B = 2 mA
Common emitter
V CE = 5 V
(mA)
BE
CE
60
40
20
10
30
−40
5
0
300
(V)
1.0
10
(V)
1000
1.2
12
3
300
100
100
0.5
0.5
0.3
0.1
0.3
0.1
50
30
10
50
30
10
10
5
3
1
5
3
1
5
3
1
1
1
0
3
3
0.1
Collector current I
Collector current I
Collector current I
Switching Characteristics
t stg
Ta = −40°C
t f
t r
100
10
10
V
0.2
Ta = 100°C
BE (sat)
h
FE
−40
25
25
30
30
– I
– I
C
0.3
I C /I B = 10
I B1 = −I B2
Pulse width = 20 μs
Duty cycle ≤ 1%
Ta = 25°C
C
C
C
100
100
C
Common emitter
V CE = 5 V
Common emitter
I C /I B = 10
(mA)
(mA)
(A)
0.4
300
300
2006-11-13
2SC5208
1000
1000
0.5