2sc5408-t1 Renesas Electronics Corporation., 2sc5408-t1 Datasheet

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2sc5408-t1

Manufacturer Part Number
2sc5408-t1
Description
Npn Epitaxial Silicon Transistor For Microwave High-gain Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. P12095EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
FEATURE
• High f
• High gain
• NF = 1.1 dB, @f = 2 GHz V
• 6-pin Small Mini Mold Package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
PART NUMBER
2SC5408-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
17 GHz TYP.
|S
@f = 2 GHz, V
Remark To order evaluation samples, consult your NEC sales person-
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
21e
|
2
T
= 15.5 dB TYP.
PARAMETER
nel (supported in 50-pcs units).
CE
3 kpcs/reel
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
= 2 V, I
QUANTITY
NPN EPITAXIAL SILICON TRANSISTOR
C
PRELIMINARY DATA SHEET
= 7 mA
CE
= 2 V, I
SYMBOL
V
V
V
T
P
I
T
CBO
CEO
EBO
C
stg
T
j
8-mm wide emboss taping, 6-pin
(collector) feed hole direction
C
= 1 mA
PACKING STYLE
–65 to +150
RATING
150
10
30
5
3
2
UNIT
mW
mA
V
V
V
C
C
PACKAGE DIMENSIONS (in mm)
SILICON TRANSISTOR
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
2SC5408
1.25±0.1
2.1±0.1
©
1997

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2sc5408-t1 Summary of contents

Page 1

... CE C • 1.1 dB GHz V • 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY 2SC5408-T1 3 kpcs/reel Remark To order evaluation samples, consult your NEC sales person- nel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

... DC CURRENT GAIN vs. COLLECTOR CURRENT 500 200 200 A 180 A 160 A 100 140 A 120 A 50 100 Collector Current - mA C 2SC5408 MIN. TYP. MAX. UNIT 0 140 17 GHz 0.1 0. 15.5 dB 1.1 1.8 dB 0.5 1 100 ...

Page 3

... I - Collector Current - 0.3 0.2 0.1 0 100 Collector to Base Voltage - vs. f characteristics 21e V 0.5 1 Frequency - GHz 2SC5408 characteristics GHz 10 100 vs MHz 10 100 = 2.0 2.6 3 ...

Page 4

... S 22 MAG ANG 0.991 –3.2 0.993 –6.8 0.990 –10.0 0.990 –13.6 0.980 –17.3 0.971 –20.8 0.963 –24.2 0.952 –28.1 0.940 –31.6 0.927 –35.3 0.913 –38.8 0.901 – ...

Page 5

... [MEMO] 2SC5408 5 ...

Page 6

... [MEMO] 6 2SC5408 ...

Page 7

... [MEMO] 2SC5408 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2 2SC5408 M4 96.5 ...

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