2sc5436-t1 Renesas Electronics Corporation., 2sc5436-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5436-t1
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
70 to 100
EB
TN
Symbol
h
C
S
S
FE
I
I
re
NF
NF
90 to 130
CBO
EBO
f
f
21e
21e
T
T
Note 2
Note 1
350 s, Duty Cycle
FB
TP
2
2
A
V
V
V
V
V
V
V
V
V
V
= +25 C)
Data Sheet PU10104EJ01V0DS
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 5 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
Test Conditions
C
E
C
C
C
C
C
C
C
E
= 0 mA
= 0 mA
= 20 mA
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 0 mA, f = 1 MHz
2%
MIN.
9.0
7.0
8.5
6.0
70
–
–
–
–
–
TYP.
14.0
12.0
10.0
9.0
1.4
1.4
0.4
–
–
–
MAX.
100
100
130
2.0
2.0
0.8
–
–
–
–
2SC5436
GHz
GHz
Unit
nA
nA
dB
dB
dB
dB
pF
–