2sc5179-t2 Renesas Electronics Corporation., 2sc5179-t2 Datasheet - Page 3

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2sc5179-t2

Manufacturer Part Number
2sc5179-t2
Description
Npn Epitaxial Silicon Transistor In Small Mini-mold Package For Low-noise Microwave Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet
CHARACTERISTICS CURVES (T
200
100
15
10
25
20
15
10
5
0
5
0
f = 2 GHz
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1
V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
CE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
T
1.0
– Collector to Emitter Voltage – V
A
I
C
– Ambient Temperature – °C
– Collector Current – mA
50
2
3
2.0
5
V
V
100
CE
CE
7
3.0
= 2 V
= 1 V
200
180
160
140
120
100
10
I
30 mW
80
60
40
B
=
A
20
A
A
A
A
A
A
A
A
A
150
= 25 C)
20
A
500
200
100
10
50
40
30
20
10
50
20
10
5
0
0
1
V
1
CE
2
= 2 V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
BE
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
I
C
– Base to Emitter Voltage – V
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
2
– Collector Current – mA
– Collector Current – mA
5
V
3
CE
= 1 V
10
0.5
5
V
V
CE
CE
7
20
= 1 V
= 2 V
V
10
CE
2SC5179
50
= 2 V
20
100
1.0
3

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