2sc5037 Panasonic Corporation of North America, 2sc5037 Datasheet - Page 2

• Manufacturer Part Number: 2sc5037
• Description: Silicon Npn Triple Diffusion Planar Type
• Manufacturer: Panasonic Corporation of North America

Power Transistors
2
1000
100
300
100
0.3
0.1
60
50
40
30
20
10
30
10
30
10
0
3
1
0.01
3
1
Collector to base voltage V
0
1
Ambient temperature Ta ( ˚C )
(1)
(2)
(3)
25˚C
100˚C
20
0.03
Collector current I
T
C
=–25˚C
40
3
V
C
0.1
BE(sat)
P
ob
60
C
(1) T
(2) With a 100 100 2mm
(3) With a 50 50 2mm
(4) Without heat sink
— V
— Ta
0.3
Al heat sink
Al heat sink
(P
80
10
C
=Ta
C
(4)
— I
=2W)
100
CB
1
C
C
120
30
I
f=1MHz
T
E
( A )
C
I
=0
3
C
CB
140
=25˚C
/I
B
=5
( V )
160
100
10
1000
0.03
0.01
300
100
100
0.3
0.1
30
10
30
10
Collector to emitter voltage V
6
5
4
3
2
1
0
3
1
0.01
3
1
0
0
0.03
Collector current I
Collector current I
2
T
C
t
0.4
–25˚C
t
=100˚C
on
f
I
0.1
, t
h
4
C
t
FE
on
stg
— V
t
stg
, t
— I
0.3
0.8
25˚C
6
f
I
B
— I
=900mA
CE
Pulsed t
Duty cycle=1%
I
(2I
V
T
C
C
C
CC
/I
B1
=25˚C
B
8
1
=200V
=5
=–I
C
C
C
1.2
T
800mA
700mA
B2
C
600mA
w
500mA
400mA
300mA
=25˚C
V
( A )
( A )
200mA
=1ms
10
100mA
)
3
CE
CE
=5V
1.6
12
10
( V )
0.03
0.01
0.03
0.01
100
100
100
0.3
0.1
0.3
0.1
0.3
0.1
30
10
30
10
30
10
Area of safe operation (ASO)
Collector to emitter voltage V
2SC5037, 2SC5037A
0.001
3
1
0.01
3
1
3
1
1
25˚C
I
I
CP
0.03
0.003
C
Collector current I
Collector current I
T
3
C
=100˚C
V
10ms
0.01
CE(sat)
0.1
10
f
T
— I
0.03
0.3
30
DC
–25˚C
Non repetitive pulse
T
— I
C
=25˚C
C
100
0.1
C
1
C
C
t=1ms
V
f=1MHz
T
CE
C
300
=25˚C
0.3
( A )
( A )
I
3
C
=5V
/I
CE
B
=5
1000
10
( V )
1