2sc5034 Panasonic Corporation of North America, 2sc5034 Datasheet - Page 2

• Manufacturer Part Number: 2sc5034
• Description: Silicon Npn Triple Diffusion Planar Type For High Breakdown Voltage High-speed Switching
• Manufacturer: Panasonic Corporation of North America

Power Transistors
2
10000
3000
1000
0.03
0.01
100
300
100
0.3
0.1
80
70
60
50
40
30
20
10
30
10
30
10
0
3
1
0.01
3
1
0.1
Collector to base voltage V
0
Ambient temperature Ta ( ˚C )
(1)
(2)
(3)
20
0.03
Collector current I
0.3
40
V
C
(1) T
(2) With a 100
(3) Without heat sink
0.1
BE(sat)
1
P
25˚C
ob
60
Al heat sink
(P
C
C
— V
=Ta
C
— Ta
=2.0W)
0.3
80
3
— I
100˚C
100
CB
T
10
C
1
C
=–25˚C
100
C
120
I
f=1MHz
T
E
C
=0
( A )
=25˚C
30
I
3
C
CB
140
2mm
/I
B
=5
( V )
160
100
10
1000
0.03
0.01
300
100
100
0.3
0.1
0.3
0.1
30
10
30
10
Collector to emitter voltage V
5
4
3
2
1
0
3
1
0.01
3
1
0
0
T
C
0.03
=100˚C
1
Collector current I
Collector current I
–25˚C
2
t
t
on
2
f
t
t
I
0.1
, t
stg
on
h
C
FE
3
stg
4
— V
, t
— I
0.3
25˚C
4
f
— I
CE
Pulsed t
Duty cycle=1%
I
(2I
V
T
C
6
C
C
CC
/I
5
B1
=25˚C
B
1
I
=150V
=5
B
250mA
=–I
C
C
C
=300mA
200mA
150mA
6
T
100mA
B2
w
C
8
V
( A )
( A )
=1ms
60mA
=25˚C
)
80mA
3
CE
40mA
20mA
CE
7
=5V
10
10
( V )
8
1000
0.03
0.01
0.03
0.01
100
300
100
100
0.3
0.1
0.3
0.1
0.3
0.1
30
10
30
10
30
10
Area of safe operation (ASO)
Collector to emitter voltage V
3
1
0.01
3
1
0.01
3
1
1
I
I
CP
C
0.03
0.03
Collector current I
Collector current I
3
V
CE(sat)
0.1
0.1
10
10ms
f
T
— I
0.3
0.3
T
30
Non repetitive pulse
T
C
— I
C
=100˚C
=25˚C
DC
C
2SC5034
100
C
1
1
25˚C
C
C
V
f=1MHz
T
t=0.5ms
–25˚C
C
CE
300
=25˚C
( A )
( A )
I
3
3
C
=10V
/I
1ms
CE
B
=5
1000
10
10
( V )