2sc5027-x-tf3-t Unisonic Technologies, 2sc5027-x-tf3-t Datasheet - Page 3

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2sc5027-x-tf3-t

Manufacturer Part Number
2sc5027-x-tf3-t
Description
Npn Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
2SC5027
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
4.0
3.5
3.0
2.0
1.5
1.0
0.5
0.0
4.0
2.5
1000
TYPICAL CHARACTERISTICS
0.0
100
0
10
Collector Current vs. Collector-Emitter Voltage
1
0.01
Collector Current vs. Base-Emitter Voltage
V
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
CE
Collector-Emitter Voltage, V
0.2
=5V
2
DC Current Gain vs. Collector Current
Base-Emitter Voltage, V
100us
Static Characteristic
3
0.4
0.1
4
Collector Current, I
I
I
B
B
I
I
B
=150 mA
=100 mA
B
=10mA
5
=50mA
0.6
6
0.8
7
CE
1ms
BE
1
(V)
C
(V)
8
(A)
1.0
9
V
CE
1.2
=5V
10
10
1E-s
0.01
0.01
100
0.01
0.1
10
0.1
10
0.1
10
1
1
0.1
1
0.01
1
I
C(MAX )
Collector Current vs. Collector-Emitter Voltage
Vcc=400V
5.I
Ic=5I
B
I
1= - 2.5.I
CP (MAX )
(Continuous )
Saturation Voltage vs. Collector Current
B
NPN SILICON TRANSISTOR
Collector-Emitter Voltage, V
Time vs. Collector -Emitter Voltage
Collector-Emitter Voltage, V
100us
10
B
V
2=Ic
CE(SAT)
V
Safe Operating Area
Collector Current, I
0.1
BE(SAT)
Switching Time
100
1
1ms
1ms
C
1
1000
(A)
CE
CE
(V)
(V)
QW-R203-027,C
5000
3 of 4
10
10

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