2sc5027-x-tf3-t Unisonic Technologies, 2sc5027-x-tf3-t Datasheet - Page 3
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2sc5027-x-tf3-t
Manufacturer Part Number
2sc5027-x-tf3-t
Description
Npn Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
1.2SC5027-X-TF3-T.pdf
(4 pages)
2SC5027
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
4.0
3.5
3.0
2.0
1.5
1.0
0.5
0.0
4.0
2.5
1000
TYPICAL CHARACTERISTICS
0.0
100
0
10
Collector Current vs. Collector-Emitter Voltage
1
0.01
Collector Current vs. Base-Emitter Voltage
V
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
CE
Collector-Emitter Voltage, V
0.2
=5V
2
DC Current Gain vs. Collector Current
Base-Emitter Voltage, V
100us
Static Characteristic
3
0.4
0.1
4
Collector Current, I
I
I
B
B
I
I
B
=150 mA
=100 mA
B
=10mA
5
=50mA
0.6
6
0.8
7
CE
1ms
BE
1
(V)
C
(V)
8
(A)
1.0
9
V
CE
1.2
=5V
10
10
1E-s
0.01
0.01
100
0.01
0.1
10
0.1
10
0.1
10
1
1
0.1
1
0.01
1
I
C(MAX )
Collector Current vs. Collector-Emitter Voltage
Vcc=400V
5.I
Ic=5I
B
I
1= - 2.5.I
CP (MAX )
(Continuous )
Saturation Voltage vs. Collector Current
B
NPN SILICON TRANSISTOR
Collector-Emitter Voltage, V
Time vs. Collector -Emitter Voltage
Collector-Emitter Voltage, V
100us
10
B
V
2=Ic
CE(SAT)
V
Safe Operating Area
Collector Current, I
0.1
BE(SAT)
Switching Time
100
1
1ms
1ms
C
1
1000
(A)
CE
CE
(V)
(V)
QW-R203-027,C
5000
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10
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