2sc536s Jiangsu Changjiang Electronics Technology Co., Ltd., 2sc536s Datasheet

2sc536s

Manufacturer Part Number

2sc536s

Description

To-92s Plastic-encapsulate Transistors

Manufacturer

Jiangsu Changjiang Electronics Technology Co., Ltd.

Datasheet

1.2SC536S.pdf (1 pages)

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2SC536S

FEATURES

MAXIMUM RATINGS (T

ELECTRICAL CHARACTERISTICS (T

CLASSIFICATION OF h

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

RANGE

RANK

General Purpose Switching Application

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

TRANSISTOR (NPN)

60-120

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

=25℃ unless otherwise noted)

TO-92S Plastic-Encapsulate Transistors

Parameter

100-200

=25℃ unless otherwise specified)

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CE(sat)

CBO

EBO

=100µA,I

=1mA,I

=100µA,I

=50mA,I

Test

=4V,I

=35V,I

=6V, I

=6V,I

160-320

=0, f=1MHz

-55~+150

=1mA, f=100MHz

conditions

=1mA

=5mA

Value

100

300

417

150

TO – 92S

1. EMITTER

2. COLLECTOR

3. BASE

Unit

℃/W

℃

280-560

Min

Typ

100

3.5

A,Dec,2010

480-960

Max

960

0.5

MHz

Unit

μA

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