2sa1515s ROHM Co. Ltd., 2sa1515s Datasheet - Page 2

• Manufacturer Part Number: 2sa1515s
• Description: Medium Power Transistor
• Manufacturer: ROHM Co. Ltd.

Transistors
h
∗
∗
∗
∗
FE
DC current
transfer ratio
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Type
2SB1132
2SA1515S
2SB1237
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Packaging specifications and h
1 Single pulse, Pw=100ms
2 When mounted on a 40 40 0.7 mm ceramic board.
3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm
Measured using pulse current.
values are classified as follows :
Item
h
FE
Parameter
82 to 180
h
PQR
QR
PQR
Parameter
FE
2SB1132
2SA1515S
2SB1237
P
2SB1132, 2SB1237
2SA1515S
Package
Code
Basic ordering unit (pieces)
120 to 270
Q
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
FE
C
C
180 to 390
Symbol
BV
BV
BV
V
Cob
I
I
R
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
−55 to +150
Limits
−40
−32
−5
−1
−2
Min.
150
−40
−32
120
0.5
0.3
−5
82
−
−
−
−
−
2
1
T100
1000
−
−
2
or larger.
Typ.
−0.2
150
20
−
−
−
−
−
−
−
Taping
2SB1132 / 2SA1515S / 2SB1237
5000
TP
A(Pulse)
Max.
−
−
−0.5
−0.5
−0.5
390
390
A(DC)
30
−
−
−
−
Unit
W
V
V
V
C
C
MHz
Unit
µA
µA
pF
2500
TU2
∗
∗
∗
V
V
V
V
−
−
−
−
1
2
3
I
I
I
V
V
I
V
V
V
C
C
E
C
= − 50µA
CB
EB
CE
CE
CB
= − 50µA
= − 1mA
/I
B
= − 20V
= − 4V
= − 3V, I
= − 5V, I
= − 10V, I
= − 500mA/ − 50mA
Conditions
C
E
= 50mA, f = 30MHz
= − 0.1A
E
= 0A, f = 1MHz
Rev.B
∗
∗
2/4