2sa1530 ISAHAYA ELECTRONICS CORPORRATION, 2sa1530 Datasheet
2sa1530
Manufacturer Part Number
2sa1530
Description
For Low Frequency Amplify Application Silicon Pnp Epitaxial Type Ultra Super Mini Type Description
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.2SA1530.pdf
(3 pages)
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DESCRIPTION
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
● Small collector to emitter saturation voltage.
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
2SA1530 is a super mini package resin sealed
.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Parameter
V
V
V
T
I
P
T
CBO
CEO
EBO
stg
O
c
j
VCE(sat)=-0.3V max（@ I
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Parameter
（Ta=25℃）
C
=-30mA ,I
ISAHAYA ELECTRONICS CORPORATION
（Ta=25℃）
B
=-1.5mA）
-55～＋150
Ratings
VCE(sat)
V(BR)
＋150
Symbol
-100
-50
-50
200
-6
I
I
hFE
hFE
Cob
CBO
EBO
fT
CEO
I
V
V
V
V
I
V
V
C
C
Unit
= -100μA , R
mW
mA
CB
EB
CE
CE
= -30mA , I
CE
CB
℃
℃
V
V
V
= -4V , I
= -50V , I
= -6V , I
= -6V , I
= -6V , I
= -6V , I
OUTLINE DRAWING
SILICON PNP EPITAXIAL TYPE(Ultra super mini type)
※） It shows hFE classification in below table.
ｈＦＥ Item
C
C
C
E
E
= 10mA
= 0mA
= -1mA
= -0.1mA
= 0mA,f=1MHz
B
E
= 0mA
= -1.5mA
BE
Test conditions
= ∞
Item
FOR LOW FREQUENCY AMPLIFY APPLICATION
TERMINAL CONNECTER
120～270
Q
JEITA：SC-59
①：BASE
②：EMITTER
③：COLLECTOR
〈SMALL-SIGNAL TRANSISTOR〉
180～390
R
Min
-50
120
70
-
-
-
-
-
270～560
S
Limits
200
Typ
2.5
2SA1530
-
-
-
-
-
-
390～820
T
Unit：ｍｍ
Max
-0.5
-0.5
820
-0.3
-
-
-
-
MHz
Unit
μA
μA
V
pF
V
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2sa1530 Summary of contents
Page 1
... DESCRIPTION 2SA1530 is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@ I =-30mA ,I C ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting ...
Page 2
... TRANSISTOR〉 COLLECTOR DISSIPATION VS.AM BIENT TEM PERTURE 250 200 150 100 BIENT TEM PERTURE Ta (℃ ) ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type) 100 125 150 2SA1530 ...
Page 3
... TRANSISTOR〉 ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) 2SA1530 ...